NT5CB1024M4BN-DI
1G X 4 DDR DRAM, PBGA78

From Nanya Technology Corporation

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Memory Density4.29E9 deg
Memory IC TypeDDR DRAM
Memory Width4
Mfr Package Description0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78
Number of Functions1
Number of Ports1
Number of Terminals78
Number of Words1.07E9 words
Number of Words Code1G
Operating ModeSYNCHRONOUS
Organization1G X 4
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.58 V
Supply Voltage-Min (Vsup)1.42 V
Supply Voltage-Nom (Vsup)1.5 V
Surface MountYes
TechnologyCMOS
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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