Product Datasheet Search Results:

NE3514S02-T1D-A.pdf8 Pages, 181 KB, Original
NE3514S02-T1D-A
Cel
HJ-FET NCH 10DB S02 - NE3514S02-T1D-A
NE3514S02-T1D-A.pdf11 Pages, 196 KB, Original
NE3514S02-T1D-A
Renesas Electronics
K BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET

Product Details Search Results:

Cel.com/NE3514S02-T1D-A
{"Factory Pack Quantity":"10000","Technology":"GaAs","Product Category":"RF JFET Transistors","Vgs - Gate-Source Breakdown Voltage":"- 3 V","Forward Transconductance - Min":"55 mS","Brand":"CEL","Id - Continuous Drain Current":"70 mA","Packaging":"Reel","Pd - Power Dissipation":"165 mW","Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"4 V","NF - Noise Figure":"0.75 dB","Gain":"10 dB","Package / Case":"S0-2","Transistor Type":"pHEMT","Frequency":"20 GHz","Maximum Operating Temperature":"+ 1...
1465 Bytes - 21:36:49, 19 December 2024
Renesas.com/NE3514S02-T1D-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"8 dB","Drain Current-Max (ID)":"0.0150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIFIE...
1487 Bytes - 21:36:49, 19 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
C25FNE350AY232.pdf0.041Request
C25DNE350BY232.pdf0.041Request
C25DNE3501R.pdf0.041Request
C25DNE3501W.pdf0.041Request
C25DNE350A232.pdf0.041Request
C25DNE350B_GL.pdf0.041Request
C25DNE350B-GL.pdf0.041Request
C25DNE350R.pdf0.041Request
C25DNE350A_GL.pdf0.041Request
C25DNE350L.pdf0.041Request
C25DNE350AB.pdf0.041Request
C25DNE350T_GL.pdf0.041Request