Product Datasheet Search Results:

NE3512S02-T1C-A.pdf8 Pages, 182 KB, Original
NE3512S02-T1C-A
Cel
HJ-FET NCH 13.5DB S02 - NE3512S02-T1C-A
NE3512S02-T1C-A.pdf11 Pages, 195 KB, Original
NE3512S02-T1C-A
Renesas Electronics
KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET

Product Details Search Results:

Cel.com/NE3512S02-T1C-A
{"Category":"Discrete Semiconductor Products","Online Catalog":"RF HEMT, HFET, LDMOS FETs","Transistor Type":"HFET","Product Photos":"S02, S03 PKG","Family":"RF FETs","Series":"-","Noise Figure":"0.35dB","Standard Package":"1","Supplier Device Package":"S02","Voltage - Test":"2V","Packaging":"Cut Tape (CT)","Datasheets":"NE3512S02 RF Wireless Brochure","Frequency":"12GHz","Gain":"13.5dB","Package / Case":"4-SMD, Flat Leads","Current - Test":"10mA","Current Rating":"70mA","Voltage - Rated":"4V","Power - Outp...
1989 Bytes - 23:40:28, 18 December 2024
Renesas.com/NE3512S02-T1C-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"12.5 dB","Drain Current-Max (ID)":"0.0150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLI...
1492 Bytes - 23:40:28, 18 December 2024

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