Product Datasheet Search Results:

NE3509M04-A.pdf24 Pages, 650 KB, Original
NE3509M04-A
Cel
AMP HJ-FET 2GHZ 4-SMINI - NE3509M04-A
NE3509M04-A.pdf12 Pages, 211 KB, Original
NE3509M04-A
Renesas Electronics
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET

Product Details Search Results:

Cel.com/NE3509M04-A
{"Factory Pack Quantity":"50","Vds - Drain-Source Breakdown Voltage":"4 V","Transistor Polarity":"N-Channel","Package / Case":"FTSMM-4 (M04)","Mounting Style":"SMD/SMT","Product Category":"RF JFET Transistors","Vgs - Gate-Source Breakdown Voltage":"- 3 V","Brand":"CEL","Gain":"17.5 dB","Maximum Operating Temperature":"+ 150 C","Manufacturer":"CEL","Transistor Type":"HFET","Forward Transconductance - Min":"80 mS","Id - Continuous Drain Current":"60 mA","RoHS":"Details","Gate-Source Cutoff Voltage":"- 0.5 V",...
1681 Bytes - 22:07:05, 15 April 2025
Renesas.com/NE3509M04-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"16 dB","Drain Current-Max (ID)":"0.0200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIFI...
1480 Bytes - 22:07:05, 15 April 2025

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