{"Category":"Discrete Semiconductor Products","Transistor Type":"HFET","Voltage - Rated":"4V","Family":"RF FETs","Series":"-","Noise Figure":"0.7dB","Package \/ Case":"Micro-X ceramic (84C)","Supplier Device Package":"84C","Voltage - Test":"2V","Packaging":"Bulk","Datasheets":"NE350184C","Frequency":"20GHz","Gain":"13.5dB","Standard Package":"1","Current - Test":"10mA","Current Rating":"70mA","Power - Output":"-","Other Names":"Q2712397"}...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application"...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application"...