Product Datasheet Search Results:

NE34018-T1.pdf10 Pages, 142 KB, Original
NE34018-T1
Cel
HJ-FET 2GHZ SOT-343 - NE34018-T1
NE34018-T1-64-A.pdf10 Pages, 142 KB, Original
NE34018-T1-64-A
Cel
AMP HJ-FET 2GHZ SOT-343 - NE34018-T1-64-A
NE34018-T1-A.pdf10 Pages, 142 KB, Original
NE34018-T1-A
Cel
AMP HJ-FET 2GHZ SOT-343 - NE34018-T1-A
NE34018-T1.pdf16 Pages, 111 KB, Original
NE34018-T1
Nec Electronics
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE34018-T1-63.pdf9 Pages, 83 KB, Original
NE34018-T1-63
Nec Electronics
GaAs HJ-FET L to S band low noise amplifier. Idss range 30-65 mA.
NE34018-T1-64.pdf9 Pages, 83 KB, Original
NE34018-T1-64
Nec Electronics
GaAs HJ-FET L to S band low noise amplifier. Idss range 60-120 mA.
NE34018-T1.pdf18 Pages, 246 KB, Original
NE34018-T1
Renesas Electronics
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
NE34018-T1-63.pdf16 Pages, 67 KB, Original
NE34018-T1-63
Renesas Electronics
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
NE34018-T1-64.pdf16 Pages, 67 KB, Original
NE34018-T1-64
Renesas Electronics
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET

Product Details Search Results:

Cel.com/NE34018-T1
{"Category":"Discrete Semiconductor Products","Transistor Type":"HFET","Product Photos":"SOT-343 PKG","Family":"RF FETs","Series":"-","Noise Figure":"0.6dB","Package / Case":"SC-82A, SOT-343","Supplier Device Package":"SOT-343","Voltage - Test":"2V","Packaging":"Tape & Reel (TR)","Datasheets":"NE34018","Frequency":"2GHz","Gain":"16dB","Standard Package":"3,000","Current - Test":"5mA","Current Rating":"120mA","Voltage - Rated":"4V","Power - Output":"12dBm","Other Names":"NE34018-T1TR NE34018-TR NE34018TR"}...
1313 Bytes - 00:34:22, 08 March 2025
Cel.com/NE34018-T1-64-A
{"Category":"Discrete Semiconductor Products","Transistor Type":"HFET","Product Photos":"SOT-343 PKG","Family":"RF FETs","Series":"-","Noise Figure":"0.6dB","Package / Case":"SC-82A, SOT-343","Supplier Device Package":"SOT-343","Voltage - Test":"2V","Packaging":"Tape & Reel (TR)","Datasheets":"NE34018","Frequency":"2GHz","Gain":"16dB","Standard Package":"3,000","Current - Test":"5mA","Current Rating":"120mA","Voltage - Rated":"4V","Power - Output":"12dBm"}...
1302 Bytes - 00:34:22, 08 March 2025
Cel.com/NE34018-T1-A
{"Category":"Discrete Semiconductor Products","Transistor Type":"HFET","Product Photos":"SOT-343 PKG","Family":"RF FETs","Series":"-","Noise Figure":"0.6dB","Package / Case":"SC-82A, SOT-343","Supplier Device Package":"SOT-343","Voltage - Test":"2V","Packaging":"Cut Tape (CT)","Datasheets":"NE34018","Frequency":"2GHz","Gain":"16dB","Standard Package":"1","Current - Test":"5mA","Current Rating":"120mA","Voltage - Rated":"4V","Power - Output":"12dBm","Other Names":"NE34018-ACT NE34018T1A"}...
1307 Bytes - 00:34:22, 08 March 2025
Renesas.com/NE34018-T1
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"14 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIFIER","Surface Mount":"Y...
1460 Bytes - 00:34:22, 08 March 2025
Renesas.com/NE34018-T1-63
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"14 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIFIER","Surface Mount":"Y...
1478 Bytes - 00:34:22, 08 March 2025
Renesas.com/NE34018-T1-64
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"14 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIFIER","Surface Mount":"Y...
1474 Bytes - 00:34:22, 08 March 2025

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