RD12MVS1-101,T112
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From Mitsubishi Electric & Electronics USA, Inc.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min50 V
Drain Current-Max (ID)4 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandVERY HIGH FREQUENCY BAND
Mfr Package DescriptionROHS COMPLIANT PACKAGE-10
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Surface MountYes
Terminal FormNO LEAD
Terminal PositionQUAD
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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