RD06HVF1-101 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Mitsubishi Electric & Electronics USA, Inc.
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 50 V |
| Drain Current-Max (ID) | 3 A |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| Lead Free | Yes |
| Mfr Package Description | ROHS COMPLIANT PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
