QM200HC-M
200 A, NPN, Si, POWER TRANSISTOR

From Mitsubishi Electric & Electronics USA, Inc.

StatusACTIVE
Collector Current-Max (IC)200 A
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)100
Number of Elements1
Number of Terminals4
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeGENERAL PURPOSE POWER

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