PM1200HCE330-1 1200 A, 3300 V, N-CHANNEL IGBT
From Mitsubishi Electric & Electronics USA, Inc.
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 1200 A |
Collector-emitter Voltage-Max | 3300 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Mfr Package Description | MODULE-6 |
Number of Elements | 1 |
Number of Terminals | 6 |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |