FS2UM-16A 2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
From Mitsubishi Electric & Electronics USA, Inc.
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 800 V |
Drain Current-Max (ID) | 2 A |
Drain-source On Resistance-Max | 6 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | TO-220, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 6 A |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |