FS10KMA-4A 10 A, 200 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
From Mitsubishi Electric & Electronics USA, Inc.
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 10 A |
Drain-source On Resistance-Max | 0.5200 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 30 A |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |