W3E64M72S-266SBI 64M X 72 DDR DRAM, 0.75 ns, PBGA219
From Microsemi Corp.
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.7500 ns |
| Memory Density | 4.83E9 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 72 |
| Mfr Package Description | 25 X 32 MM, PLASTIC, BGA-219 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 219 |
| Number of Words | 6.71E7 words |
| Number of Words Code | 64M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 64M X 72 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | BALL |
| Terminal Pitch | 1.27 mm |
| Terminal Position | BOTTOM |
