SG3081J/883B Common Emitter Transistor Array
From Linfinity Microelectronics
@I(C) (A) (Test Condition) | 30m |
@V(CBO) (V) (Test Condition) | 10 |
@V(CE) (V) (Test Condition) | 5.0 |
Emitter-Base Diode (Y/N) | No |
I(C) Abs.(A) Collector Current | 100m |
I(CBO) Max. (A) | 6.0u |
Number of Devices | 7 |
P(D) Max.(W) Power Dissipation | 750m |
Package | SO |
Semiconductor Material | Silicon |
Type (NPN/PNP) | NPN |
V(BR)CBO (V) | 20 |
V(BR)CEO (V) | 16 |
h(FE) Min. Static Current Gain | 15 |