APTGF660U60D4 825 A, 600 V, N-CHANNEL IGBT
From Microsemi Corp.
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 825 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Mfr Package Description | MODUL-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Finish | TIN LEAD |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 545 ns |
Turn-on Time-Nom (ton) | 343 ns |