APT6013JVR
40 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET

From Microsemi Corp.

StatusACTIVE
Avalanche Energy Rating (Eas)1300 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V
Drain Current-Max (ID)40 A
Drain-source On Resistance-Max0.1300 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionISOTOP-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)160 A
Terminal FinishTIN SILVER COPPER
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links