5962-9309104HYX 512K X 8 EEPROM 5V MODULE, 200 ns, CDIP32
From Microsemi Corp.
| Status | ACTIVE |
| Access Time-Max (tACC) | 200 ns |
| Memory Density | 4.19E6 deg |
| Memory IC Type | EEPROM 5V MODULE |
| Memory Width | 8 |
| Mfr Package Description | HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32 |
| Number of Functions | 1 |
| Number of Terminals | 32 |
| Number of Words | 524288 words |
| Number of Words Code | 512K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 125 Cel |
| Operating Temperature-Min | -55 Cel |
| Organization | 512K X 8 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 5.5 V |
| Supply Voltage-Min (Vsup) | 4.5 V |
| Supply Voltage-Nom (Vsup) | 5 V |
| Technology | CMOS |
| Temperature Grade | MILITARY |
| Terminal Finish | GOLD |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.5 mm |
| Terminal Position | DUAL |
| Write Cycle Time-Max (tWC) | 10 ms |
