MT8LD264AG52B General Purpose Dynamic RAM - Burst EDO, Nonbuffered input
From Micron Technology
Bits Per Word | 64 |
Military | N |
Nom. Supp (V) | 3.3 |
Number of Words | 2M |
Output Config | 3-State |
P(D) Max.(W) Power Dissipation | 10 |
Package | DIMM |
Pins | 168 |
Technology | CMOS |
t(acc) Max. (S) | 52n |
tW Min (S) | 90n |