SST29VE010-200-4I-EHE 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
From Microchip Technology, Inc.
| Status | ACTIVE |
| Access Time-Max (tACC) | 200 ns |
| China RoHS Compliant | Yes |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 1.05E6 deg |
| Memory IC Type | FLASH 2.7V PROM |
| Memory Width | 8 |
| Mfr Package Description | 8 X 20 MM, ROHS COMPLIANT, MO-142BD, TSOP1-32 |
| Number of Functions | 1 |
| Number of Terminals | 32 |
| Number of Words | 131072 words |
| Number of Words Code | 128K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 128K X 8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.5000 mm |
| Terminal Position | DUAL |
| Write Cycle Time-Max (tWC) | 10 ms |
