MA4E976H1012 SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
From M/A-COM Technology Solutions, Inc.
| Status | DISCONTINUED |
| Diode Capacitance-Max | 0.2000 pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER DIODE |
| Frequency Band | KU BAND |
| Mfr Package Description | BEAM LEAD PACKAGE-3 |
| Number of Elements | 2 |
| Number of Terminals | 3 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | MICROWAVE |
| Power Dissipation Limit-Max | 0.1500 W |
| Surface Mount | Yes |
| Technology | SCHOTTKY |
| Terminal Form | FLAT |
| Terminal Position | TRIPLE |
| Type of Schottky Barrier | HIGH BARRIER |
