MA4E975H1012 SILICON, HIGH BARRIER SCHOTTKY, C-X BAND, MIXER DIODE
From M/A-COM Technology Solutions, Inc.
Status | DISCONTINUED |
Diode Capacitance-Max | 0.3500 pF |
Diode Element Material | SILICON |
Diode Type | MIXER DIODE |
Frequency Band | C BAND TO X BAND |
Mfr Package Description | BEAM LEAD PACKAGE-3 |
Number of Elements | 2 |
Number of Terminals | 3 |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | MICROWAVE |
Power Dissipation Limit-Max | 0.1500 W |
Surface Mount | Yes |
Technology | SCHOTTKY |
Terminal Form | FLAT |
Terminal Position | TRIPLE |
Type of Schottky Barrier | HIGH BARRIER |