MA4AGFCP910-T 50 V, GALLIUM ARSENIDE, PIN DIODE
From M/A-COM Technology Solutions, Inc.
| Status | ACTIVE |
| Application | SWITCHING |
| Breakdown Voltage-Min | 50 V |
| Configuration | SINGLE |
| Diode Capacitance-Max | 0.0210 pF |
| Diode Element Material | GALLIUM ARSENIDE |
| Diode Forward Resistance-Max | 6 ohm |
| Diode Type | PIN DIODE |
| Frequency Band | MILLIMETER WAVE BAND |
| Mfr Package Description | FLIP CHIP-2 |
| Minority Carrier Lifetime-Nom | 4 us |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | UNCASED CHIP |
| Power Dissipation Limit-Max | 0.0500 W |
| Surface Mount | Yes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
