Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1000 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surface Mou...