Product Datasheet Search Results:
- K4T1G084QF-BCE70
- Samsung Semiconductor Division
- 128M X 8 DDR DRAM, 0.4 ns, PBGA60
Product Details Search Results:
Samsung.com/K4T1G084QF-BCE70
{"Terminal Finish":"NOT SPECIFIED","Terminal Pitch":"0.8000 mm","Access Mode":"MULTI BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"128M","Supply Voltage-Nom (Vsup)":"1.8 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.34E8 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1.07E9 deg","EU RoHS Compliant...
1695 Bytes - 06:42:35, 19 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
K4T1G084QJ.pdf | 0.82 | 1 | Request |