Product Datasheet Search Results:
64 Pages, 1923 KB, Original- K4B2G1646C-HCNB0
- Samsung Semiconductor Division
- 128M X 16 DDR DRAM, 0.18 ns, PBGA96
Product Details Search Results:
Samsung.com/K4B2G1646C-HCNB0
{"Terminal Finish":"NOT SPECIFIED","Terminal Pitch":"0.8000 mm","Access Mode":"MULTI BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"128M","Supply Voltage-Nom (Vsup)":"1.5 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.34E8 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"2.15E9 deg","EU RoHS Compliant":"Ye...
1695 Bytes - 20:14:04, 18 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| K4B2G1646F-BCMA.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BMMA.pdf | 1.77 | 1 | Request | |
| DS_K4B2G1646F_BY_M.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BMK0.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BCK0.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BYNB.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BYMA.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BHMA.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BCNB.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BYK0.pdf | 1.77 | 1 | Request | |
| K4B2G1646F-BFMA.pdf | 1.77 | 1 | Request |
