54-00211
830 nm, LASER DIODE

From JDS Uniphase

StatusACTIVE
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Cont Wave Output Power-Nom150 mW
Lasing Wavelength-Nom830 nm
Mfr Package DescriptionTO-56, 3 PIN
Number of Functions1
Operating Temperature-Max50 Cel
Operating Temperature-Min-20 Cel
Optoelectronic Device TypeLASER DIODE
ShapeROUND
Size1.3 mm
Threshold Current-Max45 mA

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