Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"68 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL P...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/556","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782,84,86","Power - Max":"15W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Cu...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"610 mOhm @ 3.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/556","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6782U,84U,86U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...