Product Datasheet Search Results:

JANTXV2N3501.pdf3 Pages, 107 KB, Original
JANTXV2N3501
Microchip Technology
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag
JANTXV2N3501L.pdf7 Pages, 724 KB, Original
JANTXV2N3501L
Microchip Technology
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-5 Tray
JANTXV2N3501.pdf2 Pages, 50 KB, Original
JANTXV2N3501
Microsemi Corp.
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
JANTXV2N3501L.pdf2 Pages, 50 KB, Original
JANTXV2N3501L
Microsemi Corp.
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
JANTXV2N3501UB.pdf7 Pages, 612 KB, Original
JANTXV2N3501UB
Microsemi Corp.
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
JANTXV2N3501.pdf2 Pages, 84 KB, Original
JANTXV2N3501
Semicoa
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
JANTXV2N3501L.pdf2 Pages, 81 KB, Original
JANTXV2N3501L
Semicoa
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
JANTXV2N3501UB.pdf2 Pages, 242 KB, Original
JANTXV2N3501UB
Semicoa
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR

Product Details Search Results:

Microchip.com/JANTXV2N3501
1063 Bytes - 14:24:31, 06 October 2024
Microchip.com/JANTXV2N3501L
{"Collector Current (DC) ":"0.3(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Packaging":"Tray","Power Dissipation":"1(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-5","Collector-Base Voltage":"150(V)","DC Current Gain":"35","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...
1514 Bytes - 14:24:31, 06 October 2024
Microsemi.com/JANTXV2N3501
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"300mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N5682","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"400mV @ 15mA, 150mA","Series":"Military, MIL-PRF-19500\/366","Package \/ Case":"TO-205AD, TO-39-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"1W","Packaging":"Bulk","Datasheets":"2N3498 - 2N3501","Current - Collector Cutoff (Max)":"10\...
1634 Bytes - 14:24:31, 06 October 2024
Microsemi.com/JANTXV2N3501L
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"300mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N23","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"400mV @ 15mA, 150mA","Series":"Military, MIL-PRF-19500\/366","Package \/ Case":"TO-205AA, TO-5-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"1W","Packaging":"Bulk","Datasheets":"2N3498L thru 2N3501L","Current - Collector Cutoff (Max)":"1...
1631 Bytes - 14:24:31, 06 October 2024
Microsemi.com/JANTXV2N3501UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"300mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"400mV @ 15mA, 150mA","Series":"Military, MIL-PRF-19500\/366","Package \/ Case":"4-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2N3501UB","Current - Collector Cutoff (Max)":"10\u00b5A (ICBO)","Supplier Device Package":"UB","S...
1504 Bytes - 14:24:31, 06 October 2024
Semicoa.com/JANTXV2N3501
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.3000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL",...
1253 Bytes - 14:24:31, 06 October 2024
Semicoa.com/JANTXV2N3501L
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"100","Turn-off Time-Max (toff)":"115 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"1150 ns","Collector-emitter Voltage-Max":"150 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.3000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":...
1362 Bytes - 14:24:31, 06 October 2024
Semicoa.com/JANTXV2N3501UB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"20","Collector Current-Max (IC)":"0.3000 A","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE"...
1255 Bytes - 14:24:31, 06 October 2024