Product Datasheet Search Results:
7 Pages, 667 KB, Original- JANTX2N7218
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-254AA
5 Pages, 43 KB, Original- JANTX2N7218
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 224 KB, Scan- JANTX2N7218D
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
7 Pages, 183 KB, Original- JANTX2N7218U
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
6 Pages, 293 KB, Scan- JANTX2N7218
- Microsemi Corp.
- 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
5 Pages, 43 KB, Original- JANTX2N7218
- Omnirel
- Up to 28A N-channel enhancement mode MOSFET power transistor
Product Details Search Results:
Infineon.com/JANTX2N7218
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"28(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-254AA","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1479 Bytes - 15:13:22, 29 November 2024
Irf.com/JANTX2N7218
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1517 Bytes - 15:13:22, 29 November 2024
Irf.com/JANTX2N7218D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1464 Bytes - 15:13:22, 29 November 2024
Irf.com/JANTX2N7218U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1556 Bytes - 15:13:22, 29 November 2024
Microsemi.com/JANTX2N7218
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-254, 3 PIN","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0...
1318 Bytes - 15:13:22, 29 November 2024
Documentation and Support
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