Product Datasheet Search Results:
- JANTX2N6756
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-204AE
- JANTX2N6756
- International Rectifier
- 14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
- JANTX2N6756
- Microsemi Corp.
- 14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Product Details Search Results:
Infineon.com/JANTX2N6756
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"75(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-204AE","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1478 Bytes - 13:09:33, 29 November 2024
Irf.com/JANTX2N6756
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1515 Bytes - 13:09:33, 29 November 2024
Microsemi.com/JANTX2N6756
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"210 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/542","Package / Case":"TO-204AA, TO-3","Supplier Device Package":"TO-204AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6756,58,60,62","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Con...
1569 Bytes - 13:09:33, 29 November 2024
Documentation and Support
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