Product Datasheet Search Results:

JANSR2N7268.pdf12 Pages, 277 KB, Original
JANSR2N7268
International Rectifier
34 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANSR2N7268D.pdf12 Pages, 272 KB, Original
JANSR2N7268D
International Rectifier
34 A, 100 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANSR2N7268U.pdf12 Pages, 305 KB, Original
JANSR2N7268U
International Rectifier
34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
JANSR2N7268.pdf5 Pages, 177 KB, Original
JANSR2N7268
Microsemi Corp.
34 A, 100 V, 0.132 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANSR2N7268U.pdf5 Pages, 177 KB, Original
JANSR2N7268U
Microsemi Corp.
34 A, 100 V, 0.132 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AB

Product Details Search Results:

Irf.com/JANSR2N7268
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1500 Bytes - 16:03:11, 29 November 2024
Irf.com/JANSR2N7268D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0760 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1462 Bytes - 16:03:11, 29 November 2024
Irf.com/JANSR2N7268U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1565 Bytes - 16:03:11, 29 November 2024
Microsemi.com/JANSR2N7268
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"TO-254AA, 3 PIN","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Case Connection":"ISOLATED","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-so...
1343 Bytes - 16:03:11, 29 November 2024
Microsemi.com/JANSR2N7268U
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SMD-1, 3 PIN","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"34 A","Transistor Element Material":"SILICON","Number of Elements":"1","Case Connection":"ISOLATED","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE WI...
1379 Bytes - 16:03:11, 29 November 2024

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