IS61VPS10018-200BI
1M X 18 CACHE SRAM, 3.1 ns, PBGA119

From Integrated Silicon Solution, Inc.

StatusACTIVE
Access Time-Max (tACC)3.1 ns
Memory Density1.89E7 deg
Memory IC TypeCACHE SRAM
Memory Width18
Mfr Package DescriptionPLASTIC, BGA-119
Number of Functions1
Number of Terminals119
Number of Words1.05E6 words
Number of Words Code1M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization1M X 18
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)2.62 V
Supply Voltage-Min (Vsup)2.38 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FinishTIN LEAD
Terminal FormBALL
Terminal Pitch1.27 mm
Terminal PositionBOTTOM

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