IRHM150 N-Channel Enhancement MOSFET
From International Rectifier
Absolute Max. Power Diss. (W) | 150 |
I(D) Abs. Drain Current (A) | 25 |
I(DM) Max (A)(@25°C) | 100 |
Military | N |
Package | TO-254AA |
V(BR)DSS (V) | 100 |
r(DS)on Max. (Ohms) | 65m |