IRFI4229PBF MOSFET N-CH 250V 19A TO-220FP
From International Rectifier
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Datasheets | IRFI4229PBF |
Drain to Source Voltage (Vdss) | 250V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4480pF @ 25V |
Mounting Type | Through Hole |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015 |
PCN Design/Specification | Alternate Mold Compound 02/Jul/2014 |
PCN Packaging | Package Drawing Update 19/Aug/2015 |
Package / Case | TO-220-3 |
Packaging | Tube |
Power - Max | 46W |
Product Photos | TO-220AB PKG |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 11A, 10V |
Series | HEXFET® |
Standard Package | 50 |
Supplier Device Package | TO-220AB |
Vgs(th) (Max) @ Id | 5V @ 250µA |