IRF7501PBF
2.4 A, 20 V, 0.135 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)2.4 A
Drain-source On Resistance-Max0.1350 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, MICRO-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)19 A
Surface MountYes
Terminal FinishMATTE TIN OVER NICKEL
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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