SPD04N80C3=HI1 Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) TO-252
From Infineon Technologies
| Category | MOSFET |
| Channel Mode | Enhancement |
| Description | Value |
| Manufacturer | Infineon Technologies |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| Package | 3TO-252 |
| RDS-on | 1300@10V mOhm |
| Typical Fall Time | 12 ns |
| Typical Rise Time | 15 ns |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 25 ns |



