IPI037N06L3 G MOSFET N-CH 60V 90A TO262-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Datasheets | IPx034N06L3 G |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 79nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 13000pF @ 30V |
| Mounting Type | Through Hole |
| Other Names | IPI037N06L3GHKSA1 SP000397910 |
| PCN Obsolescence/ EOL | Multiple Devices 26/Jul/2012 Multiple Devices 30/Aug/2013 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 167W |
| Product Photos | TO-262-3 |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 90A, 10V |
| Series | OptiMOS™ |
| Standard Package | 500 |
| Supplier Device Package | PG-TO262-3 |
| Vgs(th) (Max) @ Id | 2.2V @ 93µA |
