IPD65R660CFDATMA1
MOSFET N-CH 700V 6.0A TO252

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C6A (Tc)
DatasheetsIPx65R660CFD
Drain to Source Voltage (Vdss)650V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs22nC @ 10V
Input Capacitance (Ciss) @ Vds615pF @ 100V
Mounting TypeSurface Mount
Other NamesSP001117748
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
PackagingTape & Reel (TR)
Power - Max62.5W
Product PhotosTO252-3
Rds On (Max) @ Id, Vgs660 mOhm @ 2.1A, 10V
SeriesCoolMOS™
Standard Package2,500
Supplier Device PackagePG-TO252-3
Vgs(th) (Max) @ Id4.5V @ 200µA

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