IPD12CN10N G MOSFET N-CH 100V 67A TO252-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Datasheets | IP(B,D,I,P)12CN10N G |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4320pF @ 50V |
| Mounting Type | Surface Mount |
| Other Names | IPD12CN10NGBUMA1 SP000096476 |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 125W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 67A, 10V |
| Series | OptiMOS™ |
| Standard Package | 2,500 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
