IPB034N06N3 G MOSFET N-CH 60V 100A TO263-7
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Datasheets | IPB034N06N3 G |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 11000pF @ 30V |
| Mounting Type | Surface Mount |
| Other Names | IPB034N06N3 GDKR |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Packaging | Digi-Reel® |
| Power - Max | 167W |
| Product Photos | TO-263-7, D2Pak |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 100A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TO263-7 |
| Vgs(th) (Max) @ Id | 4V @ 93µA |
