IPB021N06N3 G MOSFET N-CH 60V 120A TO263-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Datasheets | IPx021,24N06N3 G |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 275nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 23000pF @ 30V |
| Mounting Type | Surface Mount |
| Other Names | IPB021N06N3 GDKR |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Digi-Reel® |
| Power - Max | 250W |
| Product Photos | TO-263 |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 100A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TO263-2 |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
