IPB017N10N5ATMA1 MOSFET N-CH 100V 180A D2PAK-7
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Datasheets | IPB017N10N5 |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 15600pF @ 50V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | IPB017N10N5ATMA1TR SP001227028 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Packaging | Tape & Reel (TR) |
| Power - Max | 375W |
| Product Photos | D2PAK SOT427 |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 100A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1,000 |
| Supplier Device Package | PG-TO263-7 |
| Vgs(th) (Max) @ Id | 3.8V @ 279µA |
