IDW10G65C5 DIODE SCHOTTKY 650V 10A TO247-3
From Infineon Technologies
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 10A (DC) |
| Current - Reverse Leakage @ Vr | 400µA @ 650V |
| Datasheets | IDW10G65C5 |
| Diode Type | Silicon Carbide Schottky |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Through Hole |
| Online Catalog | 3rd Generation thinQ!™ SiC Schottky Diode |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Other Names | IDW10G65C5FKSA1 SP000937038 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Product Photos | IPW65R095C7XKSA1 |
| Reverse Recovery Time (trr) | 0ns |
| Series | thinQ!™ |
| Speed | No Recovery Time > 500mA (Io) |
| Standard Package | 240 |
| Supplier Device Package | PG-TO247-3 |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
