HYB39S16160AT10 Synchronous Dynamic RAM - 2 Bank DRAM, Self refresh
From Infineon Technologies
| Bits Per Word | 16 |
| Military | N |
| Nom. Supp (V) | 3.3 |
| Number of Words | 512k |
| Output Config | 3-State |
| P(D) Max.(W) Power Dissipation | 1 |
| Package | TSOP |
| Pins | 50 |
| Technology | CMOS |
| t(acc) Max. (S) | 8n |
| tW Min (S) | 10n |
