FZ1000R33HE3 1000 A, 3300 V, N-CHANNEL IGBT
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| China RoHS Compliant | Yes |
| Collector Current-Max (IC) | 1000 A |
| Collector-emitter Voltage-Max | 3300 V |
| Configuration | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Mfr Package Description | MODULE-7 |
| Number of Elements | 2 |
| Number of Terminals | 7 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 3550 ns |
| Turn-on Time-Nom (ton) | 1150 ns |
