BUZ32 H MOSFET N-CH 200V 9.5A TO220-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Datasheets | BUZ32 H |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
| Mounting Type | Through Hole |
| Other Names | BUZ32H BUZ32HXKSA1 SP000682998 |
| PCN Obsolescence/ EOL | Multiple Devices 30/Aug/2013 |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power - Max | 75W |
| Product Photos | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 6A, 10V |
| Series | SIPMOS® |
| Standard Package | 500 |
| Supplier Device Package | PG-TO220-3 |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
