BSS139H6906
100 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Infineon Technologies AG

StatusACTIVE
Channel TypeN-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)0.1000 A
Drain-source On Resistance-Max30 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)3.3 pF
Lead FreeYes
Mfr Package DescriptionGREEN, PLASTIC PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.3600 W
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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