BSP299H6327XUSA1 MOSFET N-Ch 500V 400mA SOT-223-3
From Infineon Technologies
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 30 ns |
| Forward Transconductance - Min | 0.3 S |
| Id - Continuous Drain Current | 400 mA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-3 |
| Packaging | Reel |
| Part # Aliases | SP001058628 |
| Pd - Power Dissipation | 1.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 2.5 uC |
| Rds On - Drain-Source Resistance | 3.1 Ohms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | BSP299 |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 55 ns |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
