BSP298-L6327 0.45 A, 400 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
| Status | DISCONTINUED |
| Avalanche Energy Rating (Eas) | 130 mJ |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| China RoHS Compliant | Yes |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 400 V |
| Drain Current-Max (ID) | 0.4500 A |
| Drain-source On Resistance-Max | 3 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | SOT-223, 4 PIN |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 1.5 W |
| Pulsed Drain Current-Max (IDM) | 2 A |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
