BSP297 E6327 MOSFET N-CH 200V 660MA SOT-223
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Datasheets | BSP297 |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 16.1nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 357pF @ 25V |
| Mounting Type | Surface Mount |
| Other Names | BSP297E6327T SP000011108 |
| PCN Obsolescence/ EOL | Multiple Devices 28/Mar/2008 |
| Package / Case | TO-261-4, TO-261AA |
| Packaging | Tape & Reel (TR) |
| Power - Max | 1.8W |
| Product Photos | SOT223-3L |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V |
| Series | SIPMOS® |
| Standard Package | 1,000 |
| Supplier Device Package | PG-SOT223-4 |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
